N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? SINGLE DIE ISOTOP? PACKAGE

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POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM

APT

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Circuit Models for Plastic Packaged Microwave Diodes

Introduction Discrete, low-cost, surface mount semiconductor diodes are attractive choices for UHF and microwave applications where package parasitic may have a significant impact on performance. The most common package styles are the SOT-23 and the SOD-323 (Figure 1) which were neither designe

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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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