Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design ? 2.4 GHz (4x4:4) ? 5 GHz (4x4:4) ? 6 GHz (4x4:4) ? IoT Radio ? IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

文件：577.98 Kbytes 頁數(shù)：16 Pages

EXTREMENETWORKS

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design ? 2.4 GHz (4x4:4) ? 5 GHz (4x4:4) ? 6 GHz (4x4:4) ? IoT Radio ? IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

文件：577.98 Kbytes 頁數(shù)：16 Pages

EXTREMENETWORKS

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design ? 2.4 GHz (4x4:4) ? 5 GHz (4x4:4) ? 6 GHz (4x4:4) ? IoT Radio ? IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

文件：577.98 Kbytes 頁數(shù)：16 Pages

EXTREMENETWORKS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switc

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery Body

文件：64.489 Kbytes 頁數(shù)：4 Pages

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VI? optimized gate layout, delivers exceptionall

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