High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：309.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：50.97 Kbytes 頁數(shù)：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.61 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電