| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:AP4A;Package:VSSOP;88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier 1FEATURES 23? (Typical 5V Supply, Unless Otherwise Noted) ? Input Offset Voltage: ±150 μV (max) ? Input Referred Voltage Noise: 5.8 nV/√Hz ? Input Bias Current: 100 fA ? Gain Bandwidth Product: 88 MHz ? Supply Voltage Range: 1.8V to 5.5V ? Supply Current Per Channel – LMP7717: 1.15 mA – L 文件:1.15346 Mbytes 頁(yè)數(shù):42 Pages | TI 德州儀器 | TI | ||
絲印:AP4A;Package:VSSOP;88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier 1FEATURES 23? (Typical 5V Supply, Unless Otherwise Noted) ? Input Offset Voltage: ±150 μV (max) ? Input Referred Voltage Noise: 5.8 nV/√Hz ? Input Bias Current: 100 fA ? Gain Bandwidth Product: 88 MHz ? Supply Voltage Range: 1.8V to 5.5V ? Supply Current Per Channel – LMP7717: 1.15 mA – L 文件:1.15346 Mbytes 頁(yè)數(shù):42 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/ap4040q/marking.html">AP4040Q;Package:PDFN3.3X3.3-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high 文件:701.14 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:AP4045AGU;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4045AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig 文件:794.7 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:AP4045GU;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high 文件:731.19 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:AP4075GU;Package:PDFN5x6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4075GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high 文件:692.7 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/ap4090agu/marking.html">AP4090AGU;Package:PDFN5x6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi 文件:592.6 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/ap40nd40ag/marking.html">AP40ND40AG;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40ND40AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig 文件:725.92 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/ap40nd40g/marking.html">AP40ND40G;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40ND40G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high 文件:698.56 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:AP40ND60AG;Package:DFN5X6-8L;NCE N-Channel Super Trench Power MOSFET Description The NCEAP40ND60AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig 文件:732.34 Kbytes 頁(yè)數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
AP4
- 制造商:
Knowles Voltronics
- 類(lèi)別:
電容器 > 微調(diào)器,可變電容器
- 包裝:
散裝
- 描述:
CAP TRIMMER 1000V HZT TH
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AltechCorp. |
新 |
19 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
Altech Corp. |
2022+ |
15 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
WJ |
23+ |
NA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
24+ |
N/A |
80000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
WJ |
2450+ |
LGA |
6540 |
原裝現(xiàn)貨或訂發(fā)貨1-2周 |
詢(xún)價(jià) | ||
富鼎 |
TO-252 |
1000 |
原裝長(zhǎng)期供貨! |
詢(xún)價(jià) | |||
硅動(dòng)力 |
12 |
QFN16 |
10000 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢(xún)價(jià) | ||
APEC |
24+ |
SOP-8 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
ON |
24+ |
DIP-8 |
5000 |
詢(xún)價(jià) | |||
AP |
24+ |
SOP-8 |
35200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- NE5532
- NE5532
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- NE5532
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- NE5532-TD
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- MAX232
- MAX232A
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- NE5533
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- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074

