N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-Channel 60-V (D-S) MOSFET

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VBSEMI

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Simple Drive Requirement, Small Package Outline, Surface Mount Device

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Simple Drive Requirement

文件：100.34 Kbytes 頁數(shù)：4 Pages

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Simple Drive Requirement

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

APEC

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AP2310GN-HF-3TR - 晶體管, MOSFET, N溝道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V

The AP2310GN-HF-3TR from Advanced Power Electronics Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combination of low resistance, extremely efficient and cost effectiveness. The device is best suited for commercial and indu ·Simple drive requirement\n·Drain to source voltage of 60V\n·Gate to source voltage of ±20V\n·Continuous drain current (Id) of 3A at Vgs 10V and 25°C\n·Power dissipation (pd) of 1.38W\n·Operating junction temperature range from -55°C to 150°C\n·Low on state resistance of 70mohm at Vgs 10V;

APEC

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Simple Drive Requirement

APEC

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