N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

文件：68.64 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.92 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

文件：68.64 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體