MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

30V N-Channel MOSFET

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AOSMD

萬國半導(dǎo)體

N-Channel PowerTrench? MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ Max rDS(

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

Low-Power, 1 Accurate, Dual-/Triple-/Quad-Level Battery Monitors in Small TDFN and TQFN Packages

General Description The MAX6782–MAX6790 are low-power, 1 accurate, dual-/triple-/quad-level battery monitors offered in small TDFN and TQFN packages. These devices are ideal for monitoring single lithium-ion (Li+) cells, or multicell alkaline/NiCd/NiMH power sources. These devices feature fixed a

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MAXIM

美信