N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Hal

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AOSMD

萬國半導體

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

High-Output-Drive, 10MHz, 10V/關(guān)s, Rail-to-Rail I/O Op Amps with Shutdown

1 General Description The AS1710/AS1712 are low-offset, high-output CMOS op amps that deliver 200mA of peak output current from a single supply (2.7 to 5.5V). These devices were specifically designed to drive typical headset levels (32Ω), as well as bias RF power amplifiers for wireless hand

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AMSCO

艾邁斯歐司朗

High-Output-Drive, 10MHz, 10V/us, Rail-to-Rail I/O Op Amps with Shutdown

文件：747.65 Kbytes 頁數(shù)：17 Pages

AMSCO

艾邁斯歐司朗

High-Output-Drive, 10MHz, 10V/關(guān)s, Rail-to-Rail I/O Op Amps with Shutdown

文件：1.14175 Mbytes 頁數(shù)：20 Pages

AMSCO

艾邁斯歐司朗