| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>AOK；Package：8LdMSOP；Single Digitally Controlled Potentiometer (XDCP?? Low Noise, Low Power I2C Bus, 256 Taps 文件：1.39034 Mbytes 頁數(shù)：13 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/k033v120x2/marking.html">K033V120X2；Package：TO-247-3L；1200?V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, with low RDS(ON) ? Fast switching with low RG and low capacitance ? Optimized gate drive voltage (VGS =15V) ? Low reverse recovery diode (Qrr) Applications Renewable ? EV Charger ? Solar Inverters Industrial ? UPS ? SMPS 文件：829.65 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
絲?。?a target="_blank" title="Marking" href="/k033v120x2q/marking.html">K033V120X2Q；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, with low RDS, ON ? Fast switching with low RG and low capacitance ? Optimized gate drive voltage (VGS = 15 V) ? Low reverse recovery diode (Qrr) ? AEC-Q101 Automotive Qualified Applications ? xEV Charger ? Electric Vehicle Supply 文件：833.22 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
絲?。?a target="_blank" title="Marking" href="/k065v65x2/marking.html">K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, fast switching speeds with low RG ? Optimized drive voltage (VGS =15V) for broad driver compatibility ? Robust body diode and low Qrr Applications ? Renewable ? Industrial ? EV Charger ? UPS ? Solar Inverters 文件：880.04 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
600V, aMOS5TM N-Channel Power Transistor General Description ? Proprietary aMOS5TM technology? Low RDS(ON)? Optimized switching parameters for better EMI performance? Enhanced body diode for robustness and fast reverse recovery Applications ? PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters 文件：473.61 Kbytes 頁數(shù)：6 Pages | AOSMD 萬國半導體 | AOSMD | ||
600V,aMOS5TM N-Channel Power Transistor General Description ? Proprietary aMOS5TM technology? Low RDS(ON)? Optimized switching parameters for better EMI performance? Enhanced body diode for robustness and fast reverse recovery Applications ? PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters 文件：475.17 Kbytes 頁數(shù)：6 Pages | AOSMD 萬國半導體 | AOSMD | ||
1200 V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, fast switching speeds with low RG ? Optimized drive voltage (VGS = 15 V) for broad driver compatibility ? Robust body diode and low Qrr Applications Renewable Industrial ? EV Charger ? UPS ? Solar Inverters ? SMPS ? Motor Drives 文件：874.93 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
600V, 10A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac 文件：651.89 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
1200 V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, with low RDS, ON ? Fast switching with low RG and low capacitance ? Optimized gate drive voltage (VGS = 15 V) ? Low reverse recovery diode (Qrr) Applications Renewable Industrial ? EV Charger ? UPS ? Solar Inverters ? SMPS ? Mot 文件：828.57 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD | ||
1200 V αSiC Silicon Carbide Power MOSFET Features ? Proprietary αSiC MOSFET technology ? Low loss, with low RDS, ON ? Fast switching with low RG and low capacitance ? Optimized gate drive voltage (VGS = 15 V) ? Low reverse recovery diode (Qrr) ? AEC-Q101 Automotive Qualified Applications ? xEV Charger ? Electric Vehicle Supply 文件：833.63 Kbytes 頁數(shù)：9 Pages | AOSMD 萬國半導體 | AOSMD |
詳細參數(shù)
- 型號：
AOK
- 功能描述：
IC XDCP SGL 256-TAP 50KOHM 8MSOP
- RoHS：
是
- 類別：
集成電路(IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器
- 系列：
XDCP™
- 產(chǎn)品培訓模塊：
Lead(SnPb) Finish for COTS Obsolescence Mitigation Program
- 標準包裝：
2,500
- 系列：
-
- 接片：
256
- 電阻（歐姆）：
100k
- 電路數(shù)：
2
- 溫度系數(shù)：
標準值 35 ppm/°C
- 存儲器類型：
易失
- 接口：
6 線串行（芯片選擇，遞增，增/減）
- 電源電壓：
2.6 V ~ 5.5 V
- 工作溫度：
-40°C ~ 125°C
- 安裝類型：
表面貼裝
- 封裝/外殼：
14-TSSOP（0.173，4.40mm 寬）
- 供應商設備封裝：
14-TSSOP
- 包裝：
帶卷(TR)
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
25+ |
6500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | |||
RENESAS/瑞薩 |
21+ |
3000 |
全新原裝鄙視假貨 |
詢價 | |||
INTERSIL |
2023+ |
MSOP-8 |
53500 |
正品,原裝現(xiàn)貨 |
詢價 | ||
INTERSIL |
24+ |
MSOP8 |
3086 |
詢價 | |||
Intersil |
16+ |
MSOP-8 |
8000 |
原裝現(xiàn)貨請來電咨詢 |
詢價 | ||
INTERSIL |
2016+ |
MSOP8 |
5254 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
INTERSIL |
17+ |
MSOP-8 |
9800 |
只做全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
INTERSIL |
22+ |
MSOP-8 |
8200 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
INTERSIL |
25+23+ |
MSOP8 |
26402 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
INTERSIL |
25+ |
MSOP-8 |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 |
相關(guān)芯片絲印
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- ISL60002BIH325Z-T7A
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- ISL60002CIH325Z-TK
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- TPA6136A2YFFR.B
- TPA6136A2YFFT.B
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相關(guān)庫存
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- SMBJ7.5CA
- SMBJ7.5A
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- SMBJ7.5A
- SMBJ7.5A
- SMBJ7.5A
- BD48E34G-TL
- BD48K34G-TR
- BD48E34G-TL
- BD48K34G-TL
- BD48E34G-TL
- BD48E34G-TR
- SMBJ7.5A
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