Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOC2800 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load swit

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AOSMD

萬國半導(dǎo)體

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

20V Dual N-Channel MOSFET

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AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode MOSFET with Schottky Diode

Features MOSFET ● 20V/3A , RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) SBD ● Low Forward Voltage Applications ● Power Management in Notebook Computer, Portable Equipment

文件：224.05 Kbytes 頁數(shù)：11 Pages

ANPEC

茂達電子

N-Channel Enhancement Mode MOSFET with Schottky Diode

Features MOSFET ● 20V/3A , RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) SBD ● Low Forward Voltage Applications ● Power Management in Notebook Computer, Portable Equipment

文件：224.05 Kbytes 頁數(shù)：11 Pages

ANPEC

茂達電子