N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5404E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS compliant Features VDS (V) = 20V ID = 0.5 A (VGS

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AOSMD

萬國半導(dǎo)體

N-Channel 20 V (D-S) MOSFET

FEATURES ? TrenchFET? power MOSFET ? 100 Rg tested APPLICATIONS ? Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch

文件：1.88034 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

ICs FOR AUDIO APPLICATIONS

ICs for Audio Applications 12V-360mW Single Power Amplifier

文件：204.66 Kbytes 頁數(shù)：2 Pages

ROHM

羅姆

QUAD PORT 10/100/1000 BASE - T GIGABIT COPPER TRANSCEIVER

文件：163.76 Kbytes 頁數(shù)：1 Pages

BOARDCOM

博通

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HDTV HIGH SPEED SWITCHING APPLICATIONS

文件：227.6 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝