絲印：AO4606；Package：SOP-8；30V NP-Channel Enhancement Mode MOSFET

General Features VDS = 30V ID =6 A RDS(ON)

文件：2.28955 Mbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?strong>AO4606；Package：SOP-8；30V NP-Channel Enhancement Mode MOSFET

Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6 A RDS(ON)

文件：1.72372 Mbytes 頁(yè)數(shù)：8 Pages

EVVOSEMI

翊歐

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel

文件：687.48 Kbytes 頁(yè)數(shù)：9 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

Complementary Trench MOSFET

■ Features ● N-Channel： VDS=30V ID=6A RDS(ON)

文件：2.63169 Mbytes 頁(yè)數(shù)：7 Pages

KEXIN

科信電子

N- and P-Channel 30 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Motor Drive ? Mobile Power Bank

文件：1.2317 Mbytes 頁(yè)數(shù)：14 Pages

VBSEMI

微碧半導(dǎo)體

P-Chanel and N-Channel MOSFET use advanced trench technology

Description： This P-Chanel and N-Channel MOSFET use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)

文件：2.91093 Mbytes 頁(yè)數(shù)：8 Pages

DOINGTER

杜因特

30V Complementary MOSFET

文件：551.43 Kbytes 頁(yè)數(shù)：9 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

場(chǎng)效應(yīng)管

HXY MOSFET

華軒陽(yáng)電子

場(chǎng)效應(yīng)管(MOSFET)

TDSEMIC

拓電半導(dǎo)體

N-and P-Channel Enhancement Mode Power MOSFET

XW

芯微半導(dǎo)體