RFID讀寫頭HF, DTRHF IBRWIDUS03

IFM

易福門電子

Package：模塊，連接器；包裝：散裝 類別：RF/IF，射頻/中頻和 RFID RFID 讀取器模塊 描述：READ/WRITE HEAD; 13,56 MHZ; DATA

ifm efector, inc.

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS

文件：128.25 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：321.51 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS

文件：128.25 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體