絲印：ANs；Package：SOT-343；NPN Silicon RF Transistor

Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ

文件：74.55 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

絲?。?strong>ANS；Package：VSON；SINGLE-CHIP, LI-ION AND LI-POL CHARGER IC WITH AUTONOMOUS USB-PORT AND AC-ADAPTER SUPPLY MANAGEMENT (bqTINY?-II)

1FEATURES 2· Small 3 mm ′ 3 mm MLP Package · Charges and powers Systems from Either AC Adapter or USB With Autonomous power-Source Selection · Integrated USB Control With Selectable 100 mA and 500 mA Charge Rates · Ideal for Low-Dropout Charger Designs for Single-Cell Li-Ion or Li-pol Pack

文件：1.06293 Mbytes 頁數(shù)：25 Pages

TI

德州儀器

絲?。?strong>ANS；Package：SC70；TPS715-Q1 50-mA, 24-V, 3.2-μA Quiescent Current Low-Dropout Linear Regulators in SC70 Package

1 Features ? AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B for legacy chip and C5 for new chip ? Input voltage range: 2.5 V to 24 V ? Available output voltage opti

文件：4.92831 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲印：ANS；Package：SC70；TPS715xx-Q1 50-mA, 24-V, 3.2-μA Supply Current Low-Dropout Linear Regulators in SC70 Package

1 Features 1? Qualified for Automotive Applications – Automotive Grade 1 (Q-temperature Range) – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B ? 24-V Maximum Input Voltage ? Low 3.2-μA Quiescent Current at 50 mA ? Stable With Any Capacitor (> 0.47 μF) ? 5

文件：1.16835 Mbytes 頁數(shù)：20 Pages

TI

德州儀器

絲?。?strong>ANS；Package：SC70；TPS715-Q1 50-mA, 24-V, 3.2-μA Quiescent Current Low-Dropout Linear Regulators in SC70 Package

1 Features ? AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B for legacy chip and C5 for new chip ? Input voltage range: 2.5 V to 24 V ? Available output voltage opti

文件：4.92831 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?strong>ANs；Package：SOT-343；High Linearity Low Noise Si NPN RF Transistor

文件：1.82964 Mbytes 頁數(shù)：27 Pages

INFINEON

英飛凌

絲?。?strong>ANs；Package：SOT-343；Linear Low Noise Silicon Bipolar RF Transistor

文件：1.55085 Mbytes 頁數(shù)：28 Pages

INFINEON

英飛凌

16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages

Analog Features ? Up to 14-Channel, Software Selectable, 10/12-Bit Analog-to-Digital Converter: - 12-bit, 200K samples/second conversion rate (single Sample-and-Hold) - Sleep mode operation - Charge pump for operating at lower AVDD - Band gap reference input feature - Windowed threshold co

文件：3.46848 Mbytes 頁數(shù)：416 Pages

MICROCHIP

微芯科技

16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages

Analog Features ? Up to 14-Channel, Software Selectable, 10/12-Bit Analog-to-Digital Converter: - 12-bit, 200K samples/second conversion rate (single Sample-and-Hold) - Sleep mode operation - Charge pump for operating at lower AVDD - Band gap reference input feature - Windowed threshold co

文件：3.46848 Mbytes 頁數(shù)：416 Pages

MICROCHIP

微芯科技

16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages

Analog Features ? Up to 14-Channel, Software Selectable, 10/12-Bit Analog-to-Digital Converter: - 12-bit, 200K samples/second conversion rate (single Sample-and-Hold) - Sleep mode operation - Charge pump for operating at lower AVDD - Band gap reference input feature - Windowed threshold co

文件：3.46848 Mbytes 頁數(shù)：416 Pages

MICROCHIP

微芯科技