TD-SCDMA Radio Chipset Block Diagram for Handset Application

文件：37.15 Kbytes 頁數(shù)：3 Pages

MAXIM

美信

USING THE ISOVOLT DC/DC CONVERTER REFERENCE DESIGN

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SILABS

芯科科技

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

文件：137.68 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

文件：137.68 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

Limit Alarms (potentiometer adj.) A-UNIT

文件：125.3 Kbytes 頁數(shù)：4 Pages

MSYSTEM

愛模