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          首頁>AN4021>規(guī)格書詳情

          AN4021中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

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          廠商型號(hào)

          AN4021

          功能描述

          Calculation of reverse losses in a power diode

          文件大小

          126.13 Kbytes

          頁面數(shù)量

          10

          生產(chǎn)廠商

          STMICROELECTRONICS

          中文名稱

          意法半導(dǎo)體

          網(wǎng)址

          網(wǎng)址

          數(shù)據(jù)手冊(cè)

          下載地址一下載地址二到原廠下載

          更新時(shí)間

          2026-1-21 20:00:00

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          AN4021價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

          AN4021規(guī)格書詳情

          Introduction

          This application note explains how to calculate reverse losses in a power diode by taking into account the impact of the junction temperature (Tj) as well as the reverse voltage VR on the leakage current.

          The ideal current and voltage waveforms of an ultrafast diode in a power supply system during a switching cycle are illustrated in Figure 1.

          The reverse losses in a diode are the result of a reverse bias applied on the diode. They are due to the leakage current (IR). This parameter (IR) increases exponentially with the junction temperature. Most of time, the reverse losses are negligible for bipolar and silicon carbide diodes. For silicon Schottky structured diodes, these losses should be accurately estimated as they are the main origin of the thermal runaway risk phenomenon (See AN1542).

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