MOSFETs

Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accompl

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VISHAYVishay Siliconix

威世威世科技公司

New Features of the X25057 and X25097

Renesas

瑞薩

MONO CLASS_D AMPLIFIERS

INTRODUCTION The TDA7480/81/82 are single ended , split supply, class_D amplifiers. The output of the amplifier is a high frequency square wave (around 100Khz), rail to rail, with variable duty cycle. The audio information is the average value of the output square wave. To obtain the audio sign

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STMICROELECTRONICS

意法半導體

Bi-directional low voltage translators

Description Within the semiconductor world, there are many I/O standards that have different voltage level requirements for the input voltage (VIH or VIL) and output voltage (VOH or VOL) typically based on the device operating voltage. These voltage levels define how the device communicates with

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PHI

PHI

Battery technology used in NVRAM

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STMICROELECTRONICS

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Intrinsically Linear Angle Position Sensor

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ZFSWITCHES

采埃孚

Predicting the battery life and data

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STMICROELECTRONICS

意法半導體

HOW TO MINIMIZE THE ST7 POWER CONSUMPTION

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STMICROELECTRONICS

意法半導體

Software techniques for improving microcontrollers EMC performance

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STMICROELECTRONICS

意法半導體

A broad portfolio of high performance, best-in-class Serial Memory Products to meet all your design requirements.

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MICROCHIP

微芯科技