N-Channel 100-V (D-S) MOSFET

Key Features: ?Low rDS(on) trench technology ?Low thermal impedance ?Fast switching speed

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ANALOGPOWER

MOSFET

AnalogPower

美商亞柏

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) =

文件：209.46 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

文件：959.92 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電