P & N-Channel 32-V (D-S) MOSFET

文件：243.35 Kbytes 頁數(shù)：8 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亞柏

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 21A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. -30V, -16A, RDS(ON) = 46mW @VGS = -10V. RDS(ON) = 77mW @VGS = -4.5V.

文件：951.6 Kbytes 頁數(shù)：7 Pages

CET-MOS

華瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ● 30V, 5.3A, RDS(ON) = 35m Ω @ VGS = 10V. RDS(ON) = 50m Ω @ VGS = 4.5V. -30V, -4.0A, RDS(ON) = 65m Ω @ VGS = -10V. RDS(ON) = 100m Ω @ VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handin

文件：835.36 Kbytes 頁數(shù)：9 Pages

CET

華瑞

P-Chanel and N-Channel MOSFET use advanced trench technology

文件：2.91216 Mbytes 頁數(shù)：8 Pages

DOINGTER

杜因特