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          首頁 >AM8>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          AM80912-015

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. FEATURES: ? Internal Input/Output Matching Network ? PG = 8.1 dB at 15 W/ 1215 MHz ? Omnigold? Metalization System ? 28 V Operations ? Common Base configuration

          文件:18.8 Kbytes 頁數(shù):1 Pages

          ASI

          AM80912-030

          AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

          DESCRIPTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rate

          文件:94 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          AM80912-085

          AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

          DESCRIPTION The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW T

          文件:66.13 Kbytes 頁數(shù):5 Pages

          STMICROELECTRONICS

          意法半導體

          AM81214-006

          RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

          DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

          文件:61.42 Kbytes 頁數(shù):4 Pages

          STMICROELECTRONICS

          意法半導體

          AM81214-015

          L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

          DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

          文件:64.03 Kbytes 頁數(shù):4 Pages

          STMICROELECTRONICS

          意法半導體

          AM81214-030

          L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

          DESCRIPTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR ∞:1 ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMI

          文件:94.6 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          AM81214-030

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI AM81214-030 is Designed for 1215 – 1400 MHz, L-Band Radar Applications. FEATURES: ? Internal Input/Output Matching Network ? PG = 7.2 dB at 5.0 W(peak)/1400 MHz ? Omnigold? Metalization System

          文件:45.4 Kbytes 頁數(shù):1 Pages

          ASI

          AM81214-060

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: ? Internal Input/Output Matching Network ? PG = 6.6 dB at 55 W/1400 MHz ? Omnigold? Metalization System

          文件:66.2 Kbytes 頁數(shù):1 Pages

          ASI

          AM81214-060

          L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

          DESCRIPTION The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR ∞:1 ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ M

          文件:95.27 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          AM81214-300

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: ? Internal Input/Output Matching Network ? Common Base ? PG = 6.5 db at 325 W/1400 MHz ? Omnigold? Metalization System

          文件:17.97 Kbytes 頁數(shù):1 Pages

          ASI

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            AM8

          • 制造商:

            Altech Corporation

          • 類別:

            開關(guān) > 可配置開關(guān)元件 - 主體

          • 包裝:

          • 要求:

            觸點塊

          • 類型:

            瞬時

          • 照明:

            不發(fā)光

          • 致動器類型:

            緊急停止,圓形

          • (先選擇,然后應用篩選條件)兼容系列:

            Altech,30mm

          • 面板開口尺寸:

            30.5mm(圓形)

          • 描述:

            SWITCH UNITPB OPER 30 MM NON ILL

          供應商型號品牌批號封裝庫存備注價格
          INTEL
          23+
          BGA
          5000
          原裝正品,假一罰十
          詢價
          24+
          模塊
          3500
          原裝現(xiàn)貨,可開13%稅票
          詢價
          AMD
          2016+
          CDIP
          8880
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          AMD
          25+
          DIP
          1222
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          AMD
          24+
          3000
          詢價
          TERADYNE
          25+
          標準封裝
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          AMD
          17+
          DIP
          6200
          100%原裝正品現(xiàn)貨
          詢價
          AMD
          24+
          DIP
          5650
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          AMD
          PLCC
          94
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          INTEL
          08+
          BGA
          3
          詢價
          更多AM8供應商 更新時間2026-1-20 15:35:00
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