絲?。?strong>AM8；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff

文件：229.55 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

DESCRIPTION The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for dri

文件：44.57 Kbytes 頁(yè)數(shù)：3 Pages

STMICROELECTRONICS

意法半導(dǎo)體

One Channel H-Bridge Power Driver

● Features and Benefits ? Wide supply voltage range (2.0V~6.8V) ? Maximum output continuous current 0.9A ? Low standby mode current (Typ=0.01μA) ? Low quiescent operation current ? Low MOSFETs On-resistance 0.6Ω@Io=0.2A ; 0.65Ω@Io=0.6A ? Provide four operation modes: forward/reverse/stop/bra

文件：482.58 Kbytes 頁(yè)數(shù)：12 Pages

AMTEK

晶致半導(dǎo)體

One Channel H-Bridge Power Driver

● Features and Benefits ? Wide supply voltage range (2.0V~6.8V) ? Maximum output continuous current 0.9A ? Low standby mode current (Typ=0.01μA) ? Low quiescent operation current ? Low MOSFETs On-resistance 0.6Ω@Io=0.2A ; 0.65Ω@Io=0.6A ? Provide four operation modes: forward/reverse/stop/bra

文件：482.58 Kbytes 頁(yè)數(shù)：12 Pages

AMTEK

晶致半導(dǎo)體

8-Bit Microprocessor

8-Bit Microprocessor

文件：660.52 Kbytes 頁(yè)數(shù)：12 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF

文件：72.53 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure h

文件：56.45 Kbytes 頁(yè)數(shù)：3 Pages

STMICROELECTRONICS

意法半導(dǎo)體

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW

文件：58.09 Kbytes 頁(yè)數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-015 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ ∞:1 VSWR CAPABILITY ■ LOW

文件：94.29 Kbytes 頁(yè)數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. FEATURES: ? Internal Input/Output Matching Network ? PG = 8.1 dB at 15 W/ 1215 MHz ? Omnigold? Metalization System ? 28 V Operations ? Common Base configuration

文件：18.8 Kbytes 頁(yè)數(shù)：1 Pages

ASI