絲?。?strong>AM7；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff

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N-Channel 30-V (D-S) MOSFET

Key Features: ? Low rDS(on) trench technology ? Low thermal impedance ? Fast switching speed Typical Applications: ? White LED boost converters ? Automotive Systems ? Industrial DC/DC Conversion Circuits

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N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such a

文件：79.84 Kbytes 頁數(shù)：3 Pages

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N-Channel 100-V (D-S) MOSFET

Key Features: ? Low rDS(on) trench technology ? Low thermal impedance ? Fast switching speed Typical Applications: ? White LED boost converters ? Automotive Systems ? Industrial DC/DC Conversion Circuits

文件：122.87 Kbytes 頁數(shù)：3 Pages

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N-Channel 150-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

文件：123.69 Kbytes 頁數(shù)：3 Pages

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N-Channel 250-V (D-S) MOSFET

Key Features: ?Low r DS(on) trench technology ?Low thermal impedance ?Fast switching speed

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P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such a

文件：79.27 Kbytes 頁數(shù)：3 Pages

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P-Channel 60-V (D-S) MOSFET

Key Features: ? Low rDS(on) trench technology ? Low thermal impedance ? Fast switching speed

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2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS

GENERAL DESCRIPTION (PDL129) The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not re

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Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)

GENERAL DESCRIPTION (PDL129) The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not re

文件：2.096699 Mbytes 頁數(shù)：128 Pages

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