| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AM4435 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES ? VDS = -30V,ID = -9.1A RDS(ON) 文件：664.74 Kbytes 頁數(shù)：9 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | |
AM4435 | -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no 文件：331.5 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | |
AM4435 | SOP8 MOSFET | AiT-Semi 創(chuàng)瑞科技 | AiT-Semi | |
-30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no 文件：331.5 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
P-CHANNEL ENHANCEMENT MODE DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan 文件：511.53 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
P-CHANNEL ENHANCEMENT MODE DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan 文件：511.53 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
P-CHANNEL ENHANCEMENT MODE DESCRIPTION AM4435A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalan 文件：511.53 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
-30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no 文件：331.5 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES ? VDS = -30V,ID = -9.1A RDS(ON) 文件：664.74 Kbytes 頁數(shù)：9 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
-30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no 文件：331.5 Kbytes 頁數(shù)：8 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI |
技術(shù)參數(shù)
- 穩(wěn)態(tài)分布容積 (V)：
-30
- VGS (V)：
±20
- 入侵檢測系統(tǒng)（一） (25°C)：
-9.0
- 閾值電壓(V) 最小值/最大值：
-1.0/-2.5
- RDS(ON) Vgs=±10V(mΩ) 型：
16
- Vgs=±4.5V(mΩ) 型：
26
- 應用：
PC/Display
- 交叉參考：
AO4419
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
AIT-IC |
24+ |
SOP8 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
AIT |
2015+ |
SOP-8 |
29898 |
專業(yè)代理MOS管,型號齊全,公司優(yōu)勢產(chǎn)品 |
詢價 | ||
Analogpow |
20+ |
SOP-8 |
63258 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
AIT-IC |
24+ |
SOP-8 |
333652 |
MOS管大量供應有優(yōu)勢 |
詢價 | ||
ANALOGPOW |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
AIT-IC |
23+ |
SOP-8 |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
ANALOGPOW |
新年份 |
SOP-8 |
33288 |
原裝正品現(xiàn)貨,實單帶TP來談! |
詢價 | ||
AIT |
25+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ANALOGPOW |
24+ |
SOP-8 |
60000 |
詢價 | |||
VBSEMI/微碧半導體 |
24+ |
SOP8 |
7800 |
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談 |
詢價 |
相關(guān)規(guī)格書
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
