N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM4102 is available in a TO252-2 package. FEATURES ? VDS=30V, ID=50A RDS(ON)

文件：752 Kbytes 頁數(shù)：9 Pages

AITSEMI

創(chuàng)瑞科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM4102 is available in a TO252-2 package. FEATURES ? VDS=30V, ID=50A RDS(ON)

文件：752 Kbytes 頁數(shù)：9 Pages

AITSEMI

創(chuàng)瑞科技

Introducing the low-power concept in automotive applications using the STM8AL board of the STM8A-DISCOVERY

文件：174.36 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS 30V I

文件：151.96 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體