AM29F160BB-120EE中文資料16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory數(shù)據(jù)手冊AMD規(guī)格書

描述 Description

GENERAL DESCRIPTION
The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCCsupply. A 12.0 V VPPor 5.0 VCCare not required for write or erase operations. The device can also be programmed in standard EPROM programmers.DISTINCTIVE CHARACTERISTICS
■Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■Manufactured on 0.35 μm process technology
■Supports Common Flash Memory Interface(CFI)
■High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast as 80 ns
■Ultra low power consumption (typical values at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
■Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent any program or erase operations within that sector
Sectors can be locked in-system or via programming equipment
Temporary Sector Unprotect feature allows code changes in previously locked sectors
■Unlock Bypass Program Command
— Reduces overall programming time when issuing multiple program command sequences
■Top or bottom boot block configurations available
■Embedded Algorithms
— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
— Embedded Program algorithm automatically writes and verifies data at specified addresses
■Minimum 1,000,000 write cycle guarantee per sector
■Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
■CFI (Common Flash Interface) compliant
— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
■Compatibility with JEDEC standards
— Pinout and software compatible with single power supply Flash
— Superior inadvertent write protection
■Data# Polling and toggle bits
— Provides a software method of detecting program or erase operation completion
■Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase cycle completion (not
available on 44-pin SO)
■Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
■Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data