MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

文件：651.7 Kbytes 頁數(shù)：8 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

文件：651.7 Kbytes 頁數(shù)：8 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

文件：651.7 Kbytes 頁數(shù)：8 Pages

AITSEMI

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MOSFET -20V SINGLE P-CHANNEL MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 5.3 A R DS(ON) ON)=3 1 mΩ(Typ.)@V GS 4.5 V R DS(ON) ON)=4 0 mΩ(Typ.)@V GS 2.5 V R DS(ON) 50 mΩ(Typ.)@V GS 1.8 V R DS(ON) 60 mΩ(Typ.)@V GS 1.5 V The AM2317B is available in SOT-23 package. FEATURES ? Trech DMOS Technology ? 1.5V Low gate dri

文件：660.47 Kbytes 頁數(shù)：8 Pages

AITSEMI

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P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

文件：243.37 Kbytes 頁數(shù)：6 Pages

ANALOGPOWER

Energy Metering IC External Circuits

文件：263 Kbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

意法半導體