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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SN74ALVC00D

          絲?。?strong>ALVC00;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00D.B

          絲印:ALVC00;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00DR

          絲?。?strong>ALVC00;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00DR.B

          絲印:ALVC00;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00DRG4.B

          絲?。?strong>ALVC00;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00NSR

          絲印:ALVC00;Package:SOP;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00NSR.B

          絲?。?strong>ALVC00;Package:SOP;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

          文件:595.48 Kbytes 頁(yè)數(shù):18 Pages

          TI

          德州儀器

          SN74ALVC00IPWRG4Q1

          絲?。?a target="_blank" title="Marking" href="/alvc00i/marking.html">ALVC00I;Package:TSSOP;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

          文件:333.55 Kbytes 頁(yè)數(shù):12 Pages

          TI

          德州儀器

          SN74ALVC00IPWRG4Q1.B

          絲?。?a target="_blank" title="Marking" href="/alvc00i/marking.html">ALVC00I;Package:TSSOP;QUADRUPLE 2-INPUT POSITIVE-NAND GATE

          Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

          文件:333.55 Kbytes 頁(yè)數(shù):12 Pages

          TI

          德州儀器

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          就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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          更多ALVC00供應(yīng)商 更新時(shí)間2026-1-18 15:14:00
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