絲?。?strong>AGR；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672U

文件：767.41 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲印：AGR；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers

General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers source and sink up to 4A peak current. These devices feature a fast 20ns propagation delay and 20ns rise and fall times while driving a 5000pF capacitive load. Propagation delay time is minimized and matched between the inv

文件：429.57 Kbytes 頁數(shù)：17 Pages

MAXIM

美信

絲?。?strong>AGR；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers

文件：279.84 Kbytes 頁數(shù)：15 Pages

MAXIM

美信

絲?。?strong>AGR；Package：TDFN-83x3；4A, 20ns, Dual MOSFET Drivers TTL Logic Inputs 8-Pin TDFN and SO Packages

文件：267.32 Kbytes 頁數(shù)：15 Pages

MAXIM

美信

絲?。?strong>AGR；Package：QFN-12；6V Input, 0.6A Module Synchronous Step-Down Converter with Integrated Inductor

文件：890.42 Kbytes 頁數(shù)：16 Pages

MPS

美國芯源

絲?。?strong>AGR；Package：8LdMSOP；Single Digitally Controlled Potentiometer (XDCP?? Low Noise, Low Power, 3 wire Up/Down, 32 Taps

文件：403.1 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

Gear-Driven Rotary Stages

KEY FEATURES: ? Features LARGE, CLEAR APERTURE UP TO ?200 mm for mounting optics, cameras, process equipment, cabling & more ? Configurable with DIRECT ENCODER OPTION for enhanced positioning precision ? Accommodates PAYLOADS UP TO 425 kg ? Offers CONTINUOUS 360° ROTATION with CONFIGURABLE

文件：1.34134 Mbytes 頁數(shù)：16 Pages

AEROTECH

艾羅德克

Gear-Driven Rotary Stages

KEY FEATURES: ? Features LARGE, CLEAR APERTURE UP TO ?200 mm for mounting optics, cameras, process equipment, cabling & more ? Configurable with DIRECT ENCODER OPTION for enhanced positioning precision ? Accommodates PAYLOADS UP TO 425 kg ? Offers CONTINUOUS 360° ROTATION with CONFIGURABLE

文件：1.34134 Mbytes 頁數(shù)：16 Pages

AEROTECH

艾羅德克

30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifi

文件：425.99 Kbytes 頁數(shù)：9 Pages

TRIQUINT

45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifie

文件：432.22 Kbytes 頁數(shù)：9 Pages

TRIQUINT