絲印：AG2；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff

文件：229.55 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The AG Series is a new line of ultra-miniature DC to HV DC converters that set an industry standard in high voltage miniaturization. These component-sized converters are ideal for applications requiring minimal size and weight. Occupying less than one tenth of a cubic inch of

文件：907.57 Kbytes 頁數(shù)：10 Pages

XPPOWER

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The AG Series is a new line of ultra-miniature DC to HV DC converters that set an industry standard in high voltage miniaturization. These component-sized converters are ideal for applications requiring minimal size and weight. Occupying less than one tenth of a cubic inch of

文件：907.57 Kbytes 頁數(shù)：10 Pages

XPPOWER

MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

文件：585.73 Kbytes 頁數(shù)：8 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

文件：585.73 Kbytes 頁數(shù)：8 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

文件：585.73 Kbytes 頁數(shù)：8 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 頁數(shù)：9 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 頁數(shù)：9 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 頁數(shù)：9 Pages

AITSEMI

創(chuàng)瑞科技

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2106 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：997.35 Kbytes 頁數(shù)：15 Pages

AITSEMI

創(chuàng)瑞科技