絲?。?strong>AFP；Package：SOD-123EP；Surface Mount Schottky Barrier Rectifiers 1 A, 20 V - 150 V

Features ? Larger Cathode Pad for Improved Power Dissipation ? Ultra Thin Profile ? Package Height

文件：163.72 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲印：AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step Down Converter

文件：748.49 Kbytes 頁數(shù)：20 Pages

MPS

美國芯源

絲印：AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step-Down Converter AEC-Q100 Qualified

文件：749.58 Kbytes 頁數(shù)：20 Pages

MPS

美國芯源

絲?。?strong>AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step-Down Converter AEC-Q100 Qualified

文件：749.58 Kbytes 頁數(shù)：20 Pages

MPS

美國芯源

General Purpose PHEMT Chip

Description The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 μm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Features

文件：23.88 Kbytes 頁數(shù)：4 Pages

ALPHA

General Purpose Packaged PHEMT Chips

Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 μm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable

文件：30.33 Kbytes 頁數(shù)：4 Pages

ALPHA

General Purpose Packaged PHEMT Chips

Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 μm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable

文件：30.33 Kbytes 頁數(shù)：4 Pages

ALPHA

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：808.48 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

Dual-In-Line Package Intelligent Power Module

Features ? UL Recognized: ? 600V-6A (Trench Shielded Planar Gate IGBT) ? Full bridge Inverter module including HVIC drivers ? Built-in bootstrap diodes with integrated current-limiting resistor ? Control supply under-voltage lockout protection (UVLO) ? Over-temperature (OT) protection and te

文件：1.72517 Mbytes 頁數(shù)：15 Pages

AOSMD

萬國半導體

Dual-In-Line Package Intelligent Power Module

Features ? UL Recognized: ? 600V-6A (Trench Shielded Planar Gate IGBT) ? Full bridge Inverter module including HVIC drivers ? Built-in bootstrap diodes with integrated current-limiting resistor ? Control supply under-voltage lockout protection (UVLO) ? Over-temperature (OT) protection and te

文件：1.72517 Mbytes 頁數(shù)：15 Pages

AOSMD

萬國半導體