絲?。?strong>AFM；Package：VSSOP；BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION

1FEATURES 2· Supply Current of 40 mA (Max) · Battery-Supply Current of 100 nA (Max) · Precision Supply Voltage Monitor 3.3 V, 5 V, Other Options on Request · Backup-Battery Voltage Can Exceed VDD · Power On Reset Generator With Fixed 100-ms Reset Delay Time · Voltage Monitor For Power-Fail

文件：486.74 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲?。?strong>AFM；Package：VSSOP；BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION

1FEATURES 2· Supply Current of 40 mA (Max) · Battery-Supply Current of 100 nA (Max) · Precision Supply Voltage Monitor 3.3 V, 5 V, Other Options on Request · Backup-Battery Voltage Can Exceed VDD · Power On Reset Generator With Fixed 100-ms Reset Delay Time · Voltage Monitor For Power-Fail

文件：486.74 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲印：AFM；Package：VSSOP；BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION

1FEATURES 2· Supply Current of 40 mA (Max) · Battery-Supply Current of 100 nA (Max) · Precision Supply Voltage Monitor 3.3 V, 5 V, Other Options on Request · Backup-Battery Voltage Can Exceed VDD · Power On Reset Generator With Fixed 100-ms Reset Delay Time · Voltage Monitor For Power-Fail

文件：486.74 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

Ka Band Power GaAs MESFET Chip

Description The AFM04P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 μm and a total gate periphery of 400 μm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscilla

文件：43.02 Kbytes 頁數(shù)：3 Pages

ALPHA

Low Noise/Medium Power GaAs MESFET Chip

Description The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 μm and a total gate periphery of 400 μm. The device has excellent gain and power performance through 26 GHz, making it suitable for a wide range of commercial and military applications in oscilla

文件：15.65 Kbytes 頁數(shù)：2 Pages

ALPHA

Low Noise/Medium Power GaAs MESFET Chips

Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 μm and a total gate periphery of 400 μm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications

文件：25.99 Kbytes 頁數(shù)：3 Pages

ALPHA

Low Noise/Medium Power GaAs MESFET Chips

Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 μm and a total gate periphery of 400 μm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications

文件：37.93 Kbytes 頁數(shù)：3 Pages

ALPHA

Low Noise/Medium Power GaAs MESFET Chips

Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 μm and a total gate periphery of 400 μm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications

文件：37.93 Kbytes 頁數(shù)：3 Pages

ALPHA

Ka Band Power GaAs MESFET Chip

Description The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 μm and a total gate periphery of 600 μm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscilla

文件：19.28 Kbytes 頁數(shù)：3 Pages

ALPHA

Ka Band Power GaAs MESFET Chips

Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 μm and a total gate periphery of 600 μm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a w

文件：25.51 Kbytes 頁數(shù)：3 Pages

ALPHA