Cat 5e UTP Patch Cable

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ASSMANNAssmann Electronics Inc.

阿斯曼電子

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 3.7A, RDS(ON) = 80m? @VGS = 10V. RDS(ON) = 110m? @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：502.16 Kbytes 頁數(shù)：5 Pages

CET

華瑞

Dual N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 UIS Tested ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Set Top Box ? Low Current DC/DC

文件：1.027069 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 48 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Small package. (TO-252A) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CONSTRUCTION * N-Ch

文件：201.16 Kbytes 頁數(shù)：2 Pages

CHENMKO

力勤