| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/ds065016g3/marking.html">DS065016G3;Package:TO-247-3L;3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Features ? AEC Q 101 qualified ? Revolutionary semiconductor material Silicon Carbide (SiC) ? N o reverse recovery ? High speed switching performance ? Temperature independent s witching behavior ? System cost / size savings due to reduced cooling requirements ? J unction temperature range 文件:1.17064 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲印:DS065020C3;Package:TO-220-2L;3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件:1.15573 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020e3/marking.html">DS065020E3;Package:TO-263-2L;3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件:1.08429 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020g3/marking.html">DS065020G3;Package:TO-247-3L;3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件:1.03273 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020h3/marking.html">DS065020H3;Package:TO-247-2L;3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件:1.14778 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲印:DS065040G3;Package:TO-247-3L;3 rd Generation 65 0V/ 4 0 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent s witching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件:1.16661 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲印:8A4;Package:SOT-23;SCRs General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI) , Solid state relays,General purpose switching,Small engine ignition。 Features ◆ Repe 文件:291.08 Kbytes 頁數:6 Pages | ADV 愛德微 | ADV | ||
絲?。?a target="_blank" title="Marking" href="/08a60/marking.html">08A60;Package:TO-92;SCRs General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI) , Solid state relays,General purpose switching,Small engine ignition。 Features ◆ R 文件:291.26 Kbytes 頁數:6 Pages | ADV 愛德微 | ADV | ||
絲印:8A6;Package:SOT-23;SCRs General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI) , Solid state relays,General purpose switching,Small engine ignition。 Features ◆ Repe 文件:291.08 Kbytes 頁數:6 Pages | ADV 愛德微 | ADV | ||
RECTIFIER DIODES MODULE RECTIFIER DIODES MODULE Repetitive voltage up to 1000 V Mean forward current 957 A Surge current 23 kA 文件:153.59 Kbytes 頁數:4 Pages | POSEICO | POSEICO |
技術參數
- 產品類別:
Speakers
- 制造商:
Projects Unlimited
- 產品型號:
ADS02008MR-R
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI/德州儀器 |
25+ |
SOT353 |
15000 |
全新原裝現貨,價格優(yōu)勢 |
詢價 | ||
N/A |
23+ |
80000 |
專注配單,只做原裝進口現貨 |
詢價 | |||
23+ |
NA |
6800 |
原裝正品,力挺實單 |
詢價 | |||
24+ |
6000 |
全新原廠原裝正品現貨,低價出售,實單可談 |
詢價 | ||||
2000 |
2 |
詢價 | |||||
TI |
04+ |
SSOP28 |
29979 |
全新原裝現貨 |
詢價 | ||
TI/德州儀器 |
21+ |
WQFN-16 |
9990 |
只有原裝 |
詢價 | ||
AD |
2138+ |
SOP |
8960 |
專營軍工產品,進口原裝 |
詢價 | ||
ADI/亞德諾 |
25+ |
LFCSP |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
TI |
21+ |
SSOP |
2700 |
詢價 |
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