750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：640.11 Kbytes 頁數(shù)：24 Pages

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亞德諾

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD FOR ADRF6601

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亞德諾

Low Noise JFET Amplifiers

文件：654.75 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

文件：207.8 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導(dǎo)體

N- and P-Channel V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：2.06917 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體