Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 頁數(shù)：14 Pages

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載波裸片，硅數(shù)字衰減器，2 dB LSB，4位，10 MHz至60 GHz

ADRF5474是一款具有22 dB衰減控制范圍和2 dB步長的4位數(shù)字衰減器，采用連接在砷化鎵(GaAs)載波襯底上的硅工藝制造。該襯底集成了芯片和引線裝配焊盤，且器件底部經(jīng)過金屬化處理并接地。\n\n 該器件的工作頻率范圍為10 MHz至60 GHz，在55 GHz時提供優(yōu)于2.7 dB的插入損耗和出色的衰減精度。在所有狀態(tài)下，ADRF5474具有23 dBm（平均值）和24 dBm（峰值）的RF輸入功率處理能力。\n\n ADRF5474需要+3.3 V和?3.3 V雙電源電壓供電。該器件具有并行模式控制和互補金屬氧化物半導體(CMOS)/低壓晶體管對晶體管邏輯(LV ? 超寬帶頻率范圍：10 MHz 至 60 GHz\n\n? 衰減范圍：22 dB，步長為 2 dB\n\n? 用于線焊和帶狀鍵合的焊盤\n\n? 低插入損耗\n\n? 1.3 dB 典型值，最高 20 GHz\n\n? 2.0 dB 典型值，最高 44 GHz\n\n? 2.7 dB 典型值，最高 55 GHz\n\n\n\n? 衰減精度\n\n? ±（0.3 + 1.0% 的衰減狀態(tài)）通常高達 20 GHz\n\n? ±（0.4 + 4.0% 的衰減狀態(tài)）通常高達 44 GHz\n\n? ±（0.4 + 6.0% 的衰減狀態(tài)）通常高達 55 GHz\n\n\n\n?;

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Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 頁數(shù)：14 Pages

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亞德諾

Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 頁數(shù)：14 Pages

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亞德諾

Die on Carrier, Silicon Digital Attenuator, 2 dB LSB, 4-Bit, 10 MHz to 60 GHz

GENERAL DESCRIPTION The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of t

文件：2.08313 Mbytes 頁數(shù)：14 Pages

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