Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5080 is a reflective, SP8T switch manufactured in the silicon process. The ADRF5080 operates from 100 MHz to 20 GHz with an insertion loss of lower than 2.0 dB and an isolation higher than 40 dB. The device has an RF input power handling capability of 30 dBm contin

文件：2.09252 Mbytes 頁(yè)數(shù)：15 Pages

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100 MHz至20 GHz反射式硅SP8T開(kāi)關(guān)

ADRF5080是一款反射式SP8T開(kāi)關(guān)，采用硅工藝制造。ADRF5080的工作頻率范圍為100 MHz至20 GHz，插入損耗低于2.0 dB，隔離性能高于40 dB。針對(duì)插入損耗路徑，該器件具有30 dBm（連續(xù)波功率）的RF輸入功率處理能力。\n\n ADRF5080采用+3.3 V和?3.3 V雙電源供電。該器件還可以采用單電源電壓(VDD)供電，同時(shí)負(fù)電源引腳(VSS)接地。單電源工作條件需要較低的工作功率，同時(shí)保持出色的小信號(hào)性能，詳細(xì)信息參見(jiàn)數(shù)據(jù)手冊(cè)中的表2。\n\n ADRF5080采用兼容互補(bǔ)金屬氧化物半導(dǎo)體(CMOS)/低壓晶體管對(duì)晶體管邏輯(LVTTL ? 超寬帶頻率范圍：100 MHz至20 GHz\n\n? 低插入損耗\n\n? 1.3 dB，高達(dá)6 GHz\n\n? 1.6 dB，高達(dá)12 GHz\n\n? 2.0 dB，高達(dá)20 GHz\n\n\n\n? 高隔離度\n\n? 46 dB，高達(dá)6 GHz\n\n? 45 dB，高達(dá)12 GHz\n\n? 40 dB，高達(dá)20 GHz\n\n\n\n? 高輸入線性度\n\n? P0.1dB：33 dBm（典型值）\n\n? IP3：55 dBm（典型值）;

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Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5080 is a reflective, SP8T switch manufactured in the silicon process. The ADRF5080 operates from 100 MHz to 20 GHz with an insertion loss of lower than 2.0 dB and an isolation higher than 40 dB. The device has an RF input power handling capability of 30 dBm contin

文件：2.09252 Mbytes 頁(yè)數(shù)：15 Pages

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Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5080 is a reflective, SP8T switch manufactured in the silicon process. The ADRF5080 operates from 100 MHz to 20 GHz with an insertion loss of lower than 2.0 dB and an isolation higher than 40 dB. The device has an RF input power handling capability of 30 dBm contin

文件：2.09252 Mbytes 頁(yè)數(shù)：15 Pages

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Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5080 is a reflective, SP8T switch manufactured in the silicon process. The ADRF5080 operates from 100 MHz to 20 GHz with an insertion loss of lower than 2.0 dB and an isolation higher than 40 dB. The device has an RF input power handling capability of 30 dBm contin

文件：2.09252 Mbytes 頁(yè)數(shù)：15 Pages

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