Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5050 is a nonreflective SP4T switch manufactured in a silicon on insulator (SOI) process. The ADRF5050 operates from 100 MHz to 20 GHz with insertion loss less than 1.20 dB and isolation higher than 47 dB. The device has RF input power handling capability of 33 dBm

文件：1.26314 Mbytes 頁數(shù)：14 Pages

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非反射式硅SP4T開關(guān)，100 MHz至20 GHz

ADRF5050是一款非反射式SP4T開關(guān)，采用絕緣硅(SOI)工藝制造。ADRF5050的工作頻率范圍為100 MHz至20 GHz，具有低于1.20 dB的插入損耗以及高于47 dB的隔離性能。對于直通路徑，該器件具有33 dBm的射頻輸入功率處理能力。\n\n ADRF5050采用+3.3 V和?3.3 V雙電源供電。該器件還可以采用單正電源電壓(VDD)供電，同時(shí)負(fù)電源引腳(VSS)接地。單電源工作條件需要較低的工作功率，同時(shí)保持出色的小信號性能（參見數(shù)據(jù)手冊中的表2）。\n\n ADRF5050采用兼容互補(bǔ)金屬氧化物半導(dǎo)體(CMOS)和低壓晶體管對晶體管邏輯(LV ? 超寬帶頻率范圍：100 MHz至20 GHz\n\n? 非反射式50 Ω設(shè)計(jì)\n\n? 低插入損耗\n\n? 0.9 dB（典型值）至6 GHz\n\n? 1.00 dB（典型值）至12 GHz\n\n? 1.20 dB（典型值）至20 GHz\n\n\n\n? RFx和RFx之間高隔離度\n\n? 54 dB（典型值）至6 GHz\n\n? 50 dB（典型值）至12 GHz\n\n? 47 dB（典型值）至20 GHz\n\n\n\n? 高輸入線性度\n\n? P0.1dB：34 dBm（典型值）\n\n? IP3：55 dBm（典型值）;

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Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5050 is a nonreflective SP4T switch manufactured in a silicon on insulator (SOI) process. The ADRF5050 operates from 100 MHz to 20 GHz with insertion loss less than 1.20 dB and isolation higher than 47 dB. The device has RF input power handling capability of 33 dBm

文件：1.26314 Mbytes 頁數(shù)：14 Pages

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Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5050 is a nonreflective SP4T switch manufactured in a silicon on insulator (SOI) process. The ADRF5050 operates from 100 MHz to 20 GHz with insertion loss less than 1.20 dB and isolation higher than 47 dB. The device has RF input power handling capability of 33 dBm

文件：1.26314 Mbytes 頁數(shù)：14 Pages

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Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz

GENERAL DESCRIPTION The ADRF5050 is a nonreflective SP4T switch manufactured in a silicon on insulator (SOI) process. The ADRF5050 operates from 100 MHz to 20 GHz with insertion loss less than 1.20 dB and isolation higher than 47 dB. The device has RF input power handling capability of 33 dBm

文件：1.26314 Mbytes 頁數(shù)：14 Pages

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