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型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
ADM50N06	文件：952.54 Kbytes Page：6 Pages	絲?。?strong>ADM50N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with 文件：952.54 Kbytes 頁數(shù)：6 Pages	ADV 愛德微	ADV
ADM50N06	文件：952.54 Kbytes Page：6 Pages	絲印：ADM50N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with 文件：952.54 Kbytes 頁數(shù)：6 Pages	ADV 愛德微	ADV
ADM50N06E	文件：510.34 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：510.34 Kbytes 頁數(shù)：6 Pages	ADV 愛德微	ADV

更多ADM50N06供應商更新時間2026-1-21 16:50:00