絲?。?strong>ADM；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：975.32 Kbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/adm100n06/marking.html">ADM100N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM100N06 series MOSFETs is a new technology, which combines an innovative super junction t

文件：1.46414 Mbytes 頁數(shù)：7 Pages

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愛德微

絲?。?a target="_blank" title="Marking" href="/adm130n04/marking.html">ADM130N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM130N04 series MOSFETs is a new technology, which combines an innovative super junct

文件：819.85 Kbytes 頁數(shù)：6 Pages

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愛德微

絲?。?a target="_blank" title="Marking" href="/adm130n04g/marking.html">ADM130N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM130N04G series MOSFETs is a new technology, which combines an innovative super junc

文件：819.79 Kbytes 頁數(shù)：6 Pages

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愛德微

絲印：ADM13P10E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed ● It is ESD protested

文件：955.23 Kbytes 頁數(shù)：6 Pages

ADV

愛德微

絲印：ADM150N06E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N30E uses advanced trench technology and design to provide excellent RDS(ON) wit

文件：596.57 Kbytes 頁數(shù)：7 Pages

ADV

愛德微

絲?。?a target="_blank" title="Marking" href="/adm150n10g/marking.html">ADM150N10G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N10G series MOSFETs is a new technology, which combines an innovative super junc

文件：941.45 Kbytes 頁數(shù)：7 Pages

ADV

愛德微

絲?。?a target="_blank" title="Marking" href="/adm170n04/marking.html">ADM170N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM170N04 series MOSFETs is a new technology, which combines an innovative super junct

文件：807.9 Kbytes 頁數(shù)：6 Pages

ADV

愛德微

絲?。?a target="_blank" title="Marking" href="/adm170n04g/marking.html">ADM170N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM170N04G series MOSFETs is a new technology, which combines an innovative super junc

文件：807.83 Kbytes 頁數(shù)：6 Pages

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愛德微

絲?。?a target="_blank" title="Marking" href="/adm200n04/marking.html">ADM200N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04 series MOSFETs is a new technology, which combines an innovative super junct

文件：1.48702 Mbytes 頁數(shù)：6 Pages

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