1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

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1 pC電荷注入、100 pA泄漏電流、CMOS、±5 V/5 V/3 V、四通道單刀單擲開(kāi)關(guān)

ADG613-EP是一款單芯片CMOS器件，內(nèi)置四個(gè)獨(dú)立可選的開(kāi)關(guān)。此開(kāi)關(guān)在整個(gè)輸入信號(hào)范圍內(nèi)具有1 pC的超低電荷注入，25°C時(shí)的典型漏電流為0.01 nA。\n\n 額定電源電壓為±5 V、+5 V和3 V。它內(nèi)置四個(gè)獨(dú)立的單刀單擲(SPST)開(kāi)關(guān)。ADG613-EP內(nèi)置具有數(shù)字控制邏輯的兩個(gè)開(kāi)關(guān)，邏輯低電平時(shí)導(dǎo)通；另有兩個(gè)開(kāi)關(guān)則采用反相邏輯。\n\n 當(dāng)接通時(shí)，各開(kāi)關(guān)在兩個(gè)方向的導(dǎo)電性能相同，輸入信號(hào)范圍可擴(kuò)展至電源電壓范圍。ADG613-EP為先開(kāi)后合式開(kāi)關(guān)。\n\n ADG613-EP采用小型16引腳TSSOP封裝。\n\n 此外，ADG61 ? 1 pC電荷注入\n\n? ±2.7 V至±5.5 V雙電源供電\n\n? +2.7 V至+5.5 V單電源供電\n\n? 汽車應(yīng)用溫度范圍：–40°C至+125°C\n\n? 泄漏電流：100 pA（最大值，25°C）\n\n? 導(dǎo)通電阻：85 Ω\n\n? 軌到軌開(kāi)關(guān)工作\n\n? 快速開(kāi)關(guān)時(shí)間\n\n? 16引腳TSSOP和SOIC封裝\n\n? 典型功耗：<0.1 μW\n\n? TTL-/CMOS-兼容型輸入;

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1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

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1 pC Charge Injection, 100 pA Leakage

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1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 頁(yè)數(shù)：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 頁(yè)數(shù)：16 Pages

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1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V, Quad SPST Switches

文件：361.34 Kbytes 頁(yè)數(shù)：16 Pages

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