1 pF Off Capacitance, 1 pC Charge Injection, ?15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS? (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

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低電容、低電荷注入、±15 V/+12 V iCMOS、四通道單刀單擲開關(guān)

ADG1211 / ADG1212 /ADG1213均為單芯片互補(bǔ)金屬氧化物半導(dǎo)體(CMOS)器件，內(nèi)置四個(gè)采用 iCMOS? （工業(yè)CMOS）工藝設(shè)計(jì)的獨(dú)立可選開關(guān)。 iCMOS是一種模塊式制造工藝，集高電壓CMOS與雙極性技術(shù)于一體。利用這種工藝，可以開發(fā)工作電壓達(dá)33 V的各種高性能模擬IC，并實(shí)現(xiàn)以往的高壓器件所無法實(shí)現(xiàn)的尺寸。與采用傳統(tǒng)CMOS工藝的模擬IC不同， iCMOS器件不但可以承受高電源電壓，同時(shí)還能提升性能、大幅降低功耗并減小封裝尺寸。\n\n 這些開關(guān)具有超低電容和電荷注入特性，因而是要求低毛刺和快速建立時(shí)間的數(shù)據(jù)采集與采樣保持應(yīng)用的理想解決方案。較快的開關(guān) ? 1 pF關(guān)斷電容\n\n? 2.6 pF導(dǎo)通電容\n\n? 電荷注入小于1 pC\n\n? 電源電壓范圍：33 V\n\n? 導(dǎo)通電阻：120 Ω\n\n? 額定電源電壓：±15 V、+12 V\n\n? 無需 VL 電源\n\n? 3 V邏輯兼容輸入\n\n? 軌到軌工作\n\n? 16引腳TSSOP和16引腳LFCSP封裝\n\n? 典型功耗：<0.03 μW;

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1 pF Off Capacitance, 1 pC Charge Injection, ?15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS? (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 頁數(shù)：16 Pages

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1 pF Off Capacitance, 1 pC Charge Injection, ?15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS? (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 頁數(shù)：16 Pages

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Low Capacitance, Low Charge Injection

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Low Capacitance, Low Charge Injection, ?15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 頁數(shù)：16 Pages

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Low Capacitance, Low Charge Injection, ?15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 頁數(shù)：16 Pages

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Low Capacitance, Low Charge Injection, ?15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 頁數(shù)：16 Pages

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Low Capacitance, Low Charge Injection, ?15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 頁數(shù)：16 Pages

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Low Capacitance, Low Charge Injection, ?15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 頁數(shù)：16 Pages

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