1200-V Direct WBG Diode

Key Features: ?SiC performance ?Easy paralleling ?High current carrying capability ?Very low junction capacitance ?Highly stable V F and Q RR at elevated temperatures

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1200-V Direct WGB Diode

Key Features: ? SiC performance ? Easy paralleling ? High current carrying capability ? Very low junction capacitance ? Highly stable VF and QRR at elevated temperatures

文件：310.34 Kbytes 頁數：3 Pages

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1200-V Direct WBG Diode

Key Features: ?SiC performance ?Easy paralleling ?High current carrying capability ?Very low junction capacitance ?Highly stable V F and Q RR at elevated temperatures

文件：234.5 Kbytes 頁數：5 Pages

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4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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