Low Noise, Low Drift FET Op Amp

PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. FEATURES Improved Replacement for Burr-Brow

文件：439.62 Kbytes 頁(yè)數(shù)：8 Pages

AD

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低噪聲、低漂移FET運(yùn)算放大器

AD645是一款低噪聲、精密FET輸入運(yùn)算放大器。該器件具有FET輸入器件的皮安級(jí)輸入電流，以及失調(diào)漂移和可與高性能雙極輸入放大器媲美的輸入電壓噪聲。AD645經(jīng)過改進(jìn)，可在FET運(yùn)算放大器內(nèi)提供1 μV/°C的較低失調(diào)漂移。失調(diào)電壓漂移采用盡可能低的成本在晶圓水平上進(jìn)行測(cè)量和調(diào)整。器件本身的低噪聲架構(gòu)和先進(jìn)的制造工藝可保證器件具有低輸入電壓噪聲2 μV p-p、0.1 Hz至10 Hz。該直流性能水平及低輸入電流，讓AD645成為穩(wěn)定性至關(guān)重要的高阻抗應(yīng)用的較優(yōu)選擇。\n\nAD645按性能分為六種等級(jí)。AD645J和AD645K的額定溫度范圍為0°C to +70°C商用溫度范圍。AD64

ADI

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GSM 3 V Receiver IF Subsystem

GENERAL DESCRIPTION The AD6458 is a 3 V, low power receiver IF subsystem for operation at input frequencies as high as 400 MHz and IFs from 5 MHz up to 50 MHz. It is optimized for operation in GSM, DCS1800 and PCS1900 receivers. It consists of a mixer, IF amplifier, I and Q demodulators, a phase-

文件：268.6 Kbytes 頁(yè)數(shù)：12 Pages

AD

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GSM 3 V Receiver IF Subsystem

GENERAL DESCRIPTION The AD6458 is a 3 V, low power receiver IF subsystem for operation at input frequencies as high as 400 MHz and IFs from 5 MHz up to 50 MHz. It is optimized for operation in GSM, DCS1800 and PCS1900 receivers. It consists of a mixer, IF amplifier, I and Q demodulators, a phase-

文件：268.6 Kbytes 頁(yè)數(shù)：12 Pages

AD

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GSM 3 V Receiver IF Subsystem

GENERAL DESCRIPTION The AD6459 is a 3 V, low power receiver IF subsystem for operation at input frequencies as high as 500 MHz and IFs from 5 MHz up to 50 MHz. It is optimized for operation in GSM, DCS1800 and PCS1900 receivers. It consists of a mixer, an IF amplifier, I and Q demodulators, a pha

文件：314.57 Kbytes 頁(yè)數(shù)：12 Pages

AD

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GSM 3 V Receiver IF Subsystem

GENERAL DESCRIPTION The AD6459 is a 3 V, low power receiver IF subsystem for operation at input frequencies as high as 500 MHz and IFs from 5 MHz up to 50 MHz. It is optimized for operation in GSM, DCS1800 and PCS1900 receivers. It consists of a mixer, an IF amplifier, I and Q demodulators, a pha

文件：314.57 Kbytes 頁(yè)數(shù)：12 Pages

AD

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Low Noise, Low Drift FET Op Amp

PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. FEATURES Improved Replacement for Burr-Brow

文件：439.62 Kbytes 頁(yè)數(shù)：8 Pages

AD

亞德諾

Low Noise, Low Drift FET Op Amp

PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. FEATURES Improved Replacement for Burr-Brow

文件：439.62 Kbytes 頁(yè)數(shù)：8 Pages

AD

亞德諾

Low Noise, Low Drift FET Op Amp

PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. FEATURES Improved Replacement for Burr-Brow

文件：439.62 Kbytes 頁(yè)數(shù)：8 Pages

AD

亞德諾

Low Noise, Low Drift FET Op Amp

PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. FEATURES Improved Replacement for Burr-Brow

文件：439.62 Kbytes 頁(yè)數(shù)：8 Pages

AD

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