Radiation Hardened Quad 2-Input NAND Gate with Open Drain

Description The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage. Features ? Devices QML Qualified in Accordance with MIL-PRF-38535 ? Detailed Electrical and Screening Require

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INTERSIL

Radiation Hardened Quad 2-InputNAND Gate with Open Drain

Features ? Devices QML Qualified in Accordance with MIL-PRF38535 ? Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan ? 1.25 Micron Radiation Hardened SOS CMOS ? Total Dose >300K RAD (Si) ? Single Event Upset (SEU) Immunity:

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CMOS Quad 2-Input NAND Gate with Open Drain

The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage.\nThe ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiatio ? Devices QML Qualified in Accordance with MIL-PRF-38535 \n? 1.25 Micron Radiation Hardened SOS CMOS \n? Single Event Upset (SEU) Immunity: -10 Errors/Bit/Day (Typ) \n? Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse \n? Latch-Up Free Under Any Conditions \n? Significant Power Reduction Compared to;

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SOP8

ST

上傳：深圳市眾芯源半導(dǎo)體有限公司

SOP8

ST

上傳：深圳市眾芯源半導(dǎo)體有限公司