P-Channel Enhancement Mode Field Effect Transistor

Description The ACE3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product ACE3401A is Pb-free (meets ROHS & Sony 259 specificatio

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P-Channel Enhancement Mode Field Effect Transistor

Description The ACE3401B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features ● VDS(V)=-30V, ID=-4A ● RDS(ON)

文件：567.65 Kbytes 頁數：6 Pages

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P-Channel Enhancement Mode MOSFET

Description The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：185.81 Kbytes 頁數：8 Pages

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P-Channel Enhancement Mode MOSFET

文件：603.13 Kbytes 頁數：7 Pages

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