Eight-Channel LDO with DC/DC Converter

Features ? 1.5MHz Step-Down Converter ? 800mA, Externally Adjustable ? Synchronous with Integrated Switches ? Independent Enable ? Independent Input Power and Ground ? Operating Input Voltage Range of 2.7V to 5.5V ? LDO1, LDO2, LDO3 and LDO4 Regulators Share Same Input as the Step-down Con

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SKYWORKS

思佳訊

絲印：9RXYY；Package：TQFN44-28；Eight-Channel LDO with DC/DC Converter

Features ? 1.5MHz Step-Down Converter ? 800mA, Externally Adjustable ? Synchronous with Integrated Switches ? Independent Enable ? Independent Input Power and Ground ? Operating Input Voltage Range of 2.7V to 5.5V ? LDO1, LDO2, LDO3 and LDO4 Regulators Share Same Input as the Step-down Con

文件：2.20014 Mbytes 頁數(shù)：17 Pages

SKYWORKS

思佳訊

8 Channel LDO with DC/DC Converter

The AAT2608A is a member of AnalogicTech’s Total Power Management ICTM (TPMICTM) product family. It contains a fully integrated step-down converter and eight low dropout (LDO) regulators, making it ideal for general multiple rails applications.\nThe step-down converter is a 800mA synchronous convert ·1.5MHz Step-Down Converter\n·800mA, Externally Adjustable\n·Synchronous with Integrated Switches\n·Independent Enable\n·Independent Input Power and Ground\n·Operating Input Voltage Range of 2.7V to 5.5V\n·LDO1, LDO2, LDO3 and LDO4 Regulators Share Same Input as the Step-down Converter\n·LDO5 and LD;

Skyworks

思佳訊

isc N-Channel MOSFET Transistor

文件：282.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60V N-Channel MOSFET

General Description The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device

文件：294.93 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

60V N-Channel MOSFET

General Description The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device

文件：294.93 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體