| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
25-29 GHz GaAs MMIC Driver Amplifier Description Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the hig 文件:98.85 Kbytes 頁(yè)數(shù):2 Pages | ALPHA | ALPHA | ||
23.5-26.5 GHz GaAs MMIC Power Amplifier Description Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repea 文件:170.72 Kbytes 頁(yè)數(shù):2 Pages | ALPHA | ALPHA | ||
23.5-26.5 GHz Surface Mount Medium Power Amplifier Description The AA026P2-A4 is a broadband millimeterwave medium power amplifier in a rugged surface mount package that is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as an output stage or driver in the trans 文件:646.07 Kbytes 頁(yè)數(shù):4 Pages | ALPHA | ALPHA | ||
24-30 GHz GaAs MMIC Low Noise Amplifier Description Alpha’s three-stage reactively-matched 24–30 GHz MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha’s proven 0.25 μm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography 文件:96.18 Kbytes 頁(yè)數(shù):2 Pages | ALPHA | ALPHA | ||
23-30 GHz Low Noise Amplifier Description The AA028N1-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end or transmitter gain stage when high gain, wide dynamic range, and low noise figure are required.The 文件:317.82 Kbytes 頁(yè)數(shù):4 Pages | ALPHA | ALPHA | ||
24-30 GHz Surface Mount Low Noise Amplifier Description The AA028N1-A2 is a broadband millimeterwave low noise amplifier in a rugged surface mount package which is compatible with high-volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as the receiver frontend or as a gain stage 文件:532.37 Kbytes 頁(yè)數(shù):4 Pages | ALPHA | ALPHA | ||
27-29 GHz GaAs MMIC Power Amplifier Description Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10 power added efficiency at 28 GHz. The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the h 文件:139.01 Kbytes 頁(yè)數(shù):2 Pages | ALPHA | ALPHA | ||
27-31 GHz GaAs MMIC Driver Amplifier Description Alpha’s two-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 14 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest 文件:80.79 Kbytes 頁(yè)數(shù):2 Pages | ALPHA | ALPHA | ||
25-31 GHz Amplifier Description The AA028P2-99 is a broadband millimeterwave amplifier in a rugged package.The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter, or local oscillator chain. The robust ceramic and metal package provides excell 文件:490.92 Kbytes 頁(yè)數(shù):4 Pages | ALPHA | ALPHA | ||
25-31 GHz Surface Mount Amplifier Description The AA028P2-A2 is a broadband millimeterwave driver amplifier in a rugged surface mount package which is compatible with high volume solder installation. The amplifier is designed for use in millimeterwave communication and sensor systems as a gain stage in the receiver, transmitter, 文件:546.58 Kbytes 頁(yè)數(shù):4 Pages | ALPHA | ALPHA |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
AOZ1375DI-02
- 制造商:
Alpha \u0026 Omega Semiconductor Inc.
- 類(lèi)別:
集成電路(IC) > 配電開(kāi)關(guān),負(fù)載驅(qū)動(dòng)器
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 開(kāi)關(guān)類(lèi)型:
USB 開(kāi)關(guān)
- 輸出數(shù):
1
- 比率 - 輸入:
1:1
- 輸出配置:
高端
- 輸出類(lèi)型:
N 通道
- 接口:
開(kāi)/關(guān)
- 電壓 - 負(fù)載:
3.4V ~ 23V
- 電壓 - 供電 (Vcc/Vdd):
3.4V ~ 23V
- 電流 - 輸出(最大值):
6A
- 導(dǎo)通電阻(典型值):
17.8 毫歐
- 輸入類(lèi)型:
非反相
- 特性:
狀態(tài)標(biāo)志
- 故障保護(hù):
限流(固定),超溫,過(guò)壓,短路,UVLO
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類(lèi)型:
表面貼裝型
- 供應(yīng)商器件封裝:
12-DFN(3x3)
- 封裝/外殼:
12-VFDFN 裸露焊盤(pán)
- 描述:
IC PWR SWITCH N-CHAN 1
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AOS |
2447 |
DFN-12(3x3) |
105000 |
5000個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢(xún)價(jià) | ||
AOS |
2021+ |
DFN-12(3x3) |
499 |
詢(xún)價(jià) | |||
AOS |
2018+ |
DFN |
5000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
AOS |
22+ |
DFN |
30000 |
只做原裝正品 |
詢(xún)價(jià) | ||
24+ |
N/A |
76000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
AOS/萬(wàn)代 |
23+ |
DFN3x3-12L |
30000 |
原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢(xún)價(jià) | ||
AOS |
23+ |
DFN |
570 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
Alpha & Omega Semiconductor In |
25+ |
12-DFN(3x3) |
9350 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
AOS/萬(wàn)代 |
24+ |
原封裝 |
52000 |
只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
AOS/萬(wàn)代 |
24+ |
原封裝 |
29823 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) |
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