絲印：A7**；Package：SOT-23；P Channel Enhancement Mode MOSFET

DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app

文件：293.04 Kbytes 頁數(shù)：6 Pages

STANSON

司坦森

絲?。?strong>A7**；Package：SOT-25；High-Performance, Size Saving 150-mA CMOS LDO Regulator

文件：130.74 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?strong>A7**；Package：SOT-25；High-Performance, Size Saving 150-mA CMOS LDO Regulator

文件：181.83 Kbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲印：A7***；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V ID= -4.1 A RDS(ON)

文件：297.24 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導體

絲?。?a target="_blank" title="Marking" href="/a7/marking.html">A7***；Package：SOT-23；30V P-Channel MOSFET

文件：453.5 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導體