絲?。?strong>A6G；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 頁數(shù)：7 Pages

FS

絲印：A6G；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 頁數(shù)：7 Pages

FS

絲?。?strong>a6G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 頁數(shù)：17 Pages

FITIPOWER

天鈺科技

絲?。?strong>A6G；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

絲?。?strong>A6G；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

Airfast RF Power GaN Transistor

1 General description This 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz. 2 Features and benefits ? High terminal impedances for optimal broadband performance ? Designed for low complexity

文件：435.84 Kbytes 頁數(shù)：17 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz. 2 Features and benefits ? High terminal impedances for optimal broadband performance ? Designed for low complexity

文件：435.84 Kbytes 頁數(shù)：17 Pages

恩XP