64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

AMICC

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

AMICC

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64K X 16 BIT HIGH SPEED CMOS SRAM

General Description The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Features ■ Center power pinout ■ Supply voltage: -

文件：146.72 Kbytes 頁數(shù)：15 Pages

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128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A61L73081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 3.3V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacin

文件：180.51 Kbytes 頁數(shù)：12 Pages

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128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A61L73081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 3.3V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacin

文件：180.51 Kbytes 頁數(shù)：12 Pages

AMICC

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128K X 8 BIT HIGH SPEED CMOS SRAM

General Description The A61L73081 is a high-speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a 3.3V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacin

文件：180.51 Kbytes 頁數(shù)：12 Pages

AMICC

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